PART |
Description |
Maker |
RFP-100N50TW |
Aluminum Nitride Terminations
|
Anaren Microwave
|
RFP-250250N6X50-2 |
Aluminum Nitride Terminations 40 Watts, 50ohm
|
Anaren Microwave
|
RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
RFP-20N50TP |
0 MHz - 4000 MHz 50 ohm RF/MICROWAVE TERMINATION Aluminum Nitride Terminations
|
ANAREN INC Anaren Microwave
|
NPT1010 NPT1010-15 |
Gallium Nitride 28V, 100W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
NPT2021-DC-2P2GHZ-50W NPT2021-15 |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
TCD-2008B50J-G |
Chip Terminations
|
American Accurate Components, Inc.
|
MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管 From old datasheet system
|
Motorola Mobility Holdings, Inc. Motorola, Inc.
|